Nanoscale Cryo Silicon (Si) Etching

  • Nanoscale Si etching using simple and extremely clean plasma chemistry at cryogenic temperatures
  • Offers a unique combination of rate, selectivity and high aspect ratio capability at the nanoscale
  • Features from 10nm to 500nm

SEM image shows nanoscale cryo Si etch with 50nm trenches

 

Process specification

  PlasmaPro 100 ICP180 PlasmaPro 100 ICP380 PlasmaPro 100 Cobra PlasmaPro 100 Estrelas
Rate:  up to > 0.5 µm/min up to > 0.5 µm/min up to > 0.5 µm/min up to > 0.5 µm/min
Uniformity: < ± 5% < ± 5% < ± 5% < ± 5%*
Type of etch:   Anisotropic or Sloped Anisotropic or Sloped Anisotropic or Sloped Anisotropic or Sloped
Aspect ratio: up to 30:1 up to 30:1 up to 30:1 up to 30:1
Selectivity to PR: Up to > 10:1 Up to > 10:1 Up to > 10:1 Up to > 10:1
Wafer size: Up to 100mm Up to 200mm Up to 200mm Up to 200mm

*Up to 150mm wafers