Titanium Nitride (TiN) ICP Etching

The SEM image shows anisotropic nanoscale TiN etching ( 90 nm line) Courtesy of AMO Aachen*
* See also M.C. Lemme, J.K. Efavi, T. Mollenhauer, M. Schmidt, H.D.B. Gottlob, T. Wahlbrink,H. Kurz, "Nanoscale TiN metal gate technology for CMOS integration", Microelectronic Engineering, 83(4-9): 1551-1554, 2006.
 


 

  PlasmaPro 100 ICP180 PlasmaPro 100 ICP380
Etch rate:  > 100 nm/ min > 100 nm/ min
Selectivity to HSQ:  >2:1 >2:1
Selectivity of gate SiO2: Up to 80:1 in overetch step Up to 80:1 in overetch step
Uniformity: < ± 3 % < ± 3 %
Wafer size: Up to 100mm Up to 200mm