Nickel (Ni) Ion Beam Etching (IBE) in the Ionfab300Plus (LC)

Ni may be etched using the Ion Beam Etch process.

 

 

SEM image shows 0.3µm deep Ni etch, PR mask not removed

 

 

Summary performance data:

Chamber base pressurea <3e-7 Torr
Load lock base pressureb <2E-5 Torr

a. After 12 hours bake out at 80˚C
b. Load lock pumps down to 6E-5Torr in less than three minutes. It takes less than five minutes from  sample loading i.e. from the load lock to process platen with load lock pump down sequence.

Process specification

1. Ni etch with rotation and adjustable tilt.

Typical etch rate [nm/min]:    20nm/min
Uniformity3: < ±3%
Reproducibility: < 3
Selectivity to mask: 0.81

Notes:

  1. Some variation in etch rate, selectivity and profile may be observed between wide features and narrow features
  2. Minimum mask thickness required is (1.2 x Etch depth)/Selectivity
  3. With 5mm edge exclusion