感应耦合等离子源和镍(Ni)离子束刻蚀(IBE)

感应耦合等离子源

感应耦合等离子源

  •  ICP65适用于最大2英寸晶片
  •  ICP 180适用于最大直径100mm晶片
  •  ICP 380适用于最大直径200mm晶片
  •  每套系统也都可以刻蚀更小尺寸的晶片
  •  采用加偏压的反应离子刻蚀和温度可控的晶片电极进行感应耦合等离子  体刻蚀
  •  基于氩气溅射的工艺

 

Nickle (Ni) Ion Beam Etching

Nickel (Ni) Ion Beam Etching (IBE) in the Ionfab300Plus (LC)

Ni may be etched using the Ion Beam Etch process.

 

 

SEM image shows 0.3µm deep Ni etch, PR mask not removed

 

 

Summary performance data:

Chamber base pressurea <3e-7 Torr
Load lock base pressureb <2E-5 Torr

a. After 12 hours bake out at 80˚C
b. Load lock pumps down to 6E-5Torr in less than three minutes. It takes less than five minutes from  sample loading i.e. from the load lock to process platen with load lock pump down sequence.

Process specification

1. Ni etch with rotation and adjustable tilt.

Typical etch rate [nm/min]:    20nm/min
Uniformity3: < ±3%
Reproducibility: < 3
Selectivity to mask: 0.81

Notes:

  1. Some variation in etch rate, selectivity and profile may be observed between wide features and narrow features
  2. Minimum mask thickness required is (1.2 x Etch depth)/Selectivity
  3. With 5mm edge exclusion