Reactive Ion Etch (RIE) for Failure Analysis

Process Specification

  Polyimide Depassivation  (SiNx) SiOx (BPSG; TEOS)
  PlasmaPro FA200 (NGP80) PlasmaPro FA300 (800Plus) PlasmaPro FA200 (NGP80) PlasmaPro FA300 (800Plus) PlasmaPro FA200 (NGP80) PlasmaPro FA300 (800Plus)
Mode RIE RIE PE RIE RIE RIE
Etch Rate (Å/min) >1000 >1000 >700 >1000 >350 >350
Selectivity To SiNx  >15:1 To SiNx  >15:1 To SiOx >7:1 To SiNx  >15:1 To Poly-Si >7:1 To Poly-Si >7:1
Uniformity ± 6% (200mm wafer) ± 5% (300mm wafer) ± 7% (200mm wafer) ± 5% (300mm wafer) ± 5% (200mm wafer) ± 5% (300mm wafer)