Inductively Coupled Plasma (ICP) Etch for Failure Analysis

Process Specification

  PlasmaPro NGP80 ICP65
  Etch Rate (Å/min) Selectivity Uniformity (50mm wafer)
Polyimide >5000 >15:1 to SiNx <±5%
SiNx Depassivation  ~1000 ~1.5:1 to TEOS or SiC <±5%
SiOx ILD (BPSG, TEOS) Up to 1000 ~0.5:1 to low-k dielectrics
~0.7:1 SiC
<±5%
SiOx with higher selectivity to Nitride ~200 7:1 -
Bulk Si removal ~50000 >100:1 to SiO2 -