Copper (Cu) ICP Etching for Failure Analysis (FA)

  PlasmaPro100 ICP 180 PlasmaPro133 ICP380
Etch rate: >100nm/min >100nm/min
Uniformity: < ± 6 % < ± 6 %
Selectivity to SiO2: > 4:1 > 4:1
Wafer size: Up to 100mm Up to 300mm