Smooth anisotropic Silicon Carbide (SiC) ICP Etching

SEM shows typical SiC features etched with the metal masked ICP etch process




 

 

Process Specification

  ICP180 (PlasmaPro100) ICP380 (PlasmaPro100)
Etch rate: >300nm/min >1µm/min
Uniformity: < ± 5 % < ± 5 %
Selectivity to Al: > 7:1 > 25:1
Selectivity to Ni: - > 35:1
Wafer size: Up to 100mm Up to 200mm