使用PlasmaProTMSystem100 PECVD进行SiO2沉积的不同工艺:

  • 高沉积速率
  • 无掺杂(光学波导管)
  • 锗掺杂(光学波导管)
  • 高品质
  • 产品生产
  PlasmaPro NGP80 PECVD PlasmaPro 100 PECVD PlasmaPro System133 PECVD PlasmaPro 800Plus PECVD PlasmaPro 1000
Deposition Rate > 40nm > 40nm - > 230nm/min > 40nm - > 230nm/min > 40nm > 40nm (higher deposition rates are available)
Uniformity from < ± 2% to < ± 4% dependant on wafer size from < ± 2% to < ± 4% dependant on wafer size from < ± 1.5% to < ± 5% dependant on wafer size from < ± 2% to < ± 3% dependant on wafer size from < ± 2% to < ± 3% dependant on wafer size
Refractive Index 1.46 (controllable) 1.46 (controllable) 1.46 (controllable) 1.46 (controllable) 1.46 (controllable)
Stress <-300MPa
<-50MPa with R.I. >1.5
<-300MPa
<-50MPa with R.I. >1.5
<-300MPa
<-50MPa with R.I. >1.5
<-300MPa
<-50MPa with R.I. >1.5
<-300MPa
<-50MPa with R.I. >1.5
Single Wafer Size Up to 200mm Up to 200mm Up to 300mm Up to 300mm Up to 450mm
Batch Size Up to 9 x 2", 4 x 3" Up to 9 x 2", 4 x 3" Ip to 22 x 2”, 9 x3”, 5 x 100mm”, 3 x 120mm” Up to 43 x 2”, 19 x 3”, 10 x 100mm”, 7 x 120mm”, 4 x 150mm”, 2 x 200mm” Up to 61 x 2”, 26 x 3”, 15 x 100mm”, 9 x 120mm”, 7 x 150mm”, 3 x 200mm