使用PlasmaProTMSystem 100-ICP380进行低温ICP-CVD的SiO2沉积

  PlasmaPro 100 ICP180 PlasmaPro 100 ICP380 PlasmaPro 133 ICP380
Deposition rate: > 8nm/min - > 70nm/min
(rates up to 120nm/min have been achieved)
> 8nm/min - > 40nm/min
(higher rates have been achieved)
> 8nm/min - > 40nm/min
(higher rates have been achieved)
Uniformity: from < ± 1.5% to < ± 5% dependant on wafer size from < ± 3% to < ± 4% dependant on wafer size
(± 1.5% - ± 2% with optimised hardware)
from < ± 3% to < ± 4% dependant on wafer size
(± 1.5% - ± 2% with optimised hardware)
Refractive Index: 1.46 (controllable) 1.46 (controllable) 1.46 (controllable)
Single wafer size: Up to 150mm Up to 200mm Up to 300mm
Batch size Up to 5 x 2" Up to 9 x 2”, 4 x 3”, 2 x 100mm Up to 22 x 2”, 9 x 3”, 5 x 100mm, 3 x 120mm
Stress: <-300MPa
<-100MPa at temperatures <100oC
<-300MPa
<-100MPa at temperatures <100oC
<-300MPa
<-100MPa at temperatures <100o