用PlasmaProTMSystem100进行基于正硅酸乙酯的SiO2 PECVD沉积

  PECVD ICP CVD
  PlasmaPro 100 PECVD PlasmaPro System133 PECVD PlasmaPro 100 ICP380
Deposition Rate > 30nm/min > 30nm/min >8nm/min
Uniformity from < ± 2% to < ± 4% dependant on wafer size from < ± 2% to < ± 4% dependant on wafer size from < ± 3% to < ± 7% dependant on wafer size
Single wafer size Up to 200mm Up to 150mm Up to 200mm
Batch size Up to 9 x 2”, 4 x 3”, 2 x 100mm Up to 22 x 2”, 9 x3”, 5 x 100mm”, 3 x 120mm Up to 9 x 2”, 4 x 3”, 2 x 100mm
Refractive Index 1.46 (controllable) 1.46 (controllable) 1.46 (controllable)
Stress <-300MPa <-300MPa <-300MPa