使用FlexAL®进行SiO2等离子体原子层沉积

 

 

 

 

 

 

 

 

 

 

 

Precursors: BTBAS - t-butylaminosilane - liquid vapour draw @ 40°C
Non-metal precursors: 2 plasma
Temperature range: 140°C - 350°C
Growth rate per cycle: 1.2 Å/cycle @ 300°C
Deposition rate: 1.2nm/min @ 300°C
Refractive Index: 1.44 @ 300°C
Uniformity: ± 1.5% over 100, ± 2.5% over 150mm, ± 3.5% over 200mm (FlexAL)