沉积SiO2—沉积二氧化硅

使用牛津仪器等离子体技术的各种系统进行二氧化硅(SiO2)沉积。

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PECVD

使用PlasmaProTMSystem100 PECVD进行SiO2沉积的不同工艺:

  • 高沉积速率
  • 无掺杂(光学波导管)
  • 锗掺杂(光学波导管)
  • 高品质
  • 产品生产
  PlasmaPro NGP80 PECVD PlasmaPro 100 PECVD PlasmaPro System133 PECVD PlasmaPro 800Plus PECVD PlasmaPro 1000
Deposition Rate > 40nm > 40nm - > 230nm/min > 40nm - > 230nm/min > 40nm > 40nm (higher deposition rates are available)
Uniformity from < ± 2% to < ± 4% dependant on wafer size from < ± 2% to < ± 4% dependant on wafer size from < ± 1.5% to < ± 5% dependant on wafer size from < ± 2% to < ± 3% dependant on wafer size from < ± 2% to < ± 3% dependant on wafer size
Refractive Index 1.46 (controllable) 1.46 (controllable) 1.46 (controllable) 1.46 (controllable) 1.46 (controllable)
Stress <-300MPa
<-50MPa with R.I. >1.5
<-300MPa
<-50MPa with R.I. >1.5
<-300MPa
<-50MPa with R.I. >1.5
<-300MPa
<-50MPa with R.I. >1.5
<-300MPa
<-50MPa with R.I. >1.5
Single Wafer Size Up to 200mm Up to 200mm Up to 300mm Up to 300mm Up to 450mm
Batch Size Up to 9 x 2", 4 x 3" Up to 9 x 2", 4 x 3" Ip to 22 x 2”, 9 x3”, 5 x 100mm”, 3 x 120mm” Up to 43 x 2”, 19 x 3”, 10 x 100mm”, 7 x 120mm”, 4 x 150mm”, 2 x 200mm” Up to 61 x 2”, 26 x 3”, 15 x 100mm”, 9 x 120mm”, 7 x 150mm”, 3 x 200mm

 

TEOS

用PlasmaProTMSystem100进行基于正硅酸乙酯的SiO2 PECVD沉积

  PECVD ICP CVD
  PlasmaPro 100 PECVD PlasmaPro System133 PECVD PlasmaPro 100 ICP380
Deposition Rate > 30nm/min > 30nm/min >8nm/min
Uniformity from < ± 2% to < ± 4% dependant on wafer size from < ± 2% to < ± 4% dependant on wafer size from < ± 3% to < ± 7% dependant on wafer size
Single wafer size Up to 200mm Up to 150mm Up to 200mm
Batch size Up to 9 x 2”, 4 x 3”, 2 x 100mm Up to 22 x 2”, 9 x3”, 5 x 100mm”, 3 x 120mm Up to 9 x 2”, 4 x 3”, 2 x 100mm
Refractive Index 1.46 (controllable) 1.46 (controllable) 1.46 (controllable)
Stress <-300MPa <-300MPa <-300MPa

 

SiO2 ALD

使用FlexAL®进行SiO2等离子体原子层沉积

 

 

 

 

 

 

 

 

 

 

 

Precursors: BTBAS - t-butylaminosilane - liquid vapour draw @ 40°C
Non-metal precursors: 2 plasma
Temperature range: 140°C - 350°C
Growth rate per cycle: 1.2 Å/cycle @ 300°C
Deposition rate: 1.2nm/min @ 300°C
Refractive Index: 1.44 @ 300°C
Uniformity: ± 1.5% over 100, ± 2.5% over 150mm, ± 3.5% over 200mm (FlexAL)

 

SiO2 ICP CVD

使用PlasmaProTMSystem 100-ICP380进行低温ICP-CVD的SiO2沉积

  PlasmaPro 100 ICP180 PlasmaPro 100 ICP380 PlasmaPro 133 ICP380
Deposition rate: > 8nm/min - > 70nm/min
(rates up to 120nm/min have been achieved)
> 8nm/min - > 40nm/min
(higher rates have been achieved)
> 8nm/min - > 40nm/min
(higher rates have been achieved)
Uniformity: from < ± 1.5% to < ± 5% dependant on wafer size from < ± 3% to < ± 4% dependant on wafer size
(± 1.5% - ± 2% with optimised hardware)
from < ± 3% to < ± 4% dependant on wafer size
(± 1.5% - ± 2% with optimised hardware)
Refractive Index: 1.46 (controllable) 1.46 (controllable) 1.46 (controllable)
Single wafer size: Up to 150mm Up to 200mm Up to 300mm
Batch size Up to 5 x 2" Up to 9 x 2”, 4 x 3”, 2 x 100mm Up to 22 x 2”, 9 x 3”, 5 x 100mm, 3 x 120mm
Stress: <-300MPa
<-100MPa at temperatures <100oC
<-300MPa
<-100MPa at temperatures <100oC
<-300MPa
<-100MPa at temperatures <100o

 

Silicon Dioxide (SiO2) Sputter Deposition

附加注释:

  PlasmaPro System400
Deposition rate: > 6nm min
Refractive Index: 1.4 – 2.7
Uniformity: ± 5% (200mm Target Size)
Single wafer size: Up to 150mm
Batch size: 4 x 150mm or 8 x 100mm