Reactive Ion Etch / Plasma Etch (RIE/PE)

Benefits of RIE/PE

  • Substrate electrode cooled
  • Top or bottom electrode RF driven (13.56 MHz)
  • Automatic switching
  • Shower head gas inlet (in the top electrode)
  • Parameter: gas flows, pressure, RF power

 

RIE-PE System Features

RIE-PE System Features

Feature PlasmaPro NGP80 PlasmaPro System800Plus
Electrode size 240mm 460mm
Loading Open Load Open Load
Substrates See product brochure See product brochure
MFC controlled gaslines 8 or 12 line gas box available 8 or 12 line gas box available
Wafer stage temperature range 10-80C° 10-80C°
He Back side cooling option yes no
ICP option yes no
Focused plasma yes yes