Process solutions for the growth of materials on the Nanoscale

Nanoscale features can be formed by growth techniques (‘bottom up’) and etching (‘top down’). The Nanofab system is targeted at growth to satisfy the nanotechnology markets. Nanoscale growth processes encompass nanotubes/nanowires and nanoscale thin films.

Process Benefits

  • Controllable growth of nanotubes and nanowires
  • Plasma pre-treatment of the catalyst for enhanced growth
  • Annealing capabilities up to 800°C
  • Broad range of PECVD film deposition with excellent uniformity, high deposition rates and control of film properties such as refractive index, stress, electrical characteristics and wet chemcial etch rates
Nanostructured Materials C, Si, Ge, ZnO, Ga2O3, GaN, GaAs, GaP, InP, InN
PECVD Films SiO2, SiNx, a-Si, SiON, poly-Si, SiC


Nanoscale Growth System Features

Nanofab system features

 Feature Nanofab700 Nanofab800Agile
Table Size Up to 200mm wafer Up to 200mm wafer
Load lock Installed Installed
Liquid Precursor Compatibility Compatible Compatible
Generator Frequency Range RF (13.56MHz), LF (50-460KHz) RF (13.56MHz), LF (50-460KHz)
General PECVD Process Oxide, Nitride, Oxynitride, a-Si Oxide, Nitride, Oxynitride, a-Si
Catalyst Pretreatment Capable Capable
Process for Nanomaterials Carbon Nanotubes, Si, ZnO Nanowires Carbon Nanotubes, Si Nanowires
Table Temperature Range Room Temp to 700C Room Temp to 800C
Temperature Agility Ordinary Ramp Rate Very High Ramp Rate
O2 atmosphere compatibility (<400C) Compatible Compatible
O2 atmosphere compatibility (>400C) Compatible Non-Compatible
Extra power supply for installation Required Required
Extra gasline for installation Not Required Required