Ion Beam Deposition tool comparison

Hardware features:
 

  • Rotating and tiltable substrate holder (Ionfab 300Plus only)
  • Deposition Ion Source: 15 cm, 13.56 MHz driven
  • PBN beam neutralisation
  • Gas inlet through source, assist source and into the chamber
  • Independently changeable parameters: gas flows, ion energy, ion current, accelerator voltage, beam neutralisation
  • Mutiple targets with fixed shields and rotating shutter
  • Second source as assist source to control stochiometry (e.g. depositing oxide from metal target) or as pre-cleaning on (Ionfab 300Plus only)
  Ionfab 300Plus (SC) and (LC) Ionfab500Plus Optofab3000
Deposition source 150mm 150mm 150mm
Deposited area Up to 200mm 14 inch target Up to 200mm
Number of targets Up to 4 targets Up to 4 targets Up to 4 targets
Platen size Up to 8 inch wafer Rotating planetary (4 x 10") Up to 8 inch wafer
End point detection Dual Xtal monitors Dual Xtal monitors WLOM1
Platen rotation Up to 20rpm Up to 20rpm Up to 500rpm
Platen tilt angle -90ºC to +75ºC NA -90ºC to +75ºC
Platen heat Embedded heaters up to 300ºC Quartz lamp up to 300ºC Quartz lamp up to 300ºC
Platen cooling Helium NA No cooling
Ion source 15cm RF ion source 15cm RF ion source 15cm RF ion source
Assist or Pre-clean source 15 and 35cm RF ion source NA 15cm RF ion source

1. White Light Optical Monitor