Ion Beam Etch (IBE) Systems

Hardware features:

  • Choice of two source sizes, 15cm and 35cm RF depending on wafer size
  • Different grid designs available
  • High current neutraliser
  • Up to 200mm rotatable and tiltable substrate platen with heating and cooling capabilities
  • Choice of single wafer load-lock and cassette to cassette multi-wafer handler
  • Modular design for easy configuration into a multi-functional cluster tool
  • Variable interface configuration with clean room
  • Option of SIMS or Verity for end point detection

Ion Beam Etch tools comparison

  Ionfab 300Plus (SC) Ionfab 300Plus (LC)
Etch source 150mm 300mm
Etch area Up to 100mm Up to 200mm
Platen speed Up to 20rpm Up to 20rpm
Platen tilt angle -90ºC to +75 ºC1 -90ºC to +75 ºC1
Platen heat Embedded heaters up to 300ºC Embedded heaters up to 300ºC
Platen cooling Helium Helium
Ion source 15cm RF ion source 35cm RF ion source

1. If SIMS is used, platen tilt angle becomes -90ºC to +35 ºC