Ion Beam Etch (IBE) Systems
Hardware features:
-
Choice of two source sizes, 15cm and 35cm RF depending on wafer size
-
Different grid designs available
-
High current neutraliser
-
Up to 200mm rotatable and tiltable substrate platen with heating and cooling capabilities
-
Choice of single wafer load-lock and cassette to cassette multi-wafer handler
-
Modular design for easy configuration into a multi-functional cluster tool
-
Variable interface configuration with clean room
-
Option of SIMS or Verity for end point detection
Ion Beam Etch tools comparison
Etch source |
150mm |
300mm |
Etch area |
Up to 100mm |
Up to 200mm |
Platen speed |
Up to 20rpm |
Up to 20rpm |
Platen tilt angle |
-90ºC to +75 ºC1 |
-90ºC to +75 ºC1 |
Platen heat |
Embedded heaters up to 300ºC |
Embedded heaters up to 300ºC |
Platen cooling |
Helium |
Helium |
Ion source |
15cm RF ion source |
35cm RF ion source |
1. If SIMS is used, platen tilt angle becomes -90ºC to +35 ºC