牛津仪器等离子部工艺论文集冬季篇发布
2014年1月20日

本论文集由世界各地牛津仪器的用户们根据操作经验撰写,特邀各位共赏。
作者包括:

  • 来自德国卡塞尔大学的Ferdinand Messow
  • 来自美国康奈尔大学的Vince Genova
  • 来自电子、微电子及纳米技术研究院的Farid Medjdoub
  • 来自英国南安普敦大学纳米制造中心的Prof Peter Ashburn 和 Dr Harold M. H. Chong
  • 用户技术论文竞赛获奖者Mohammadreza Khorasaninejad

内容包括:

  • Single step vertical structuring of ion beam sputtered SiO2/Si multilayer stacks using Oxford Instruments Plasmalab100 ICP-RIE
  • Wide band gap power semiconductor device production using GaN and Si process solutions
  • Paving the way for millimeter wave GaN-on-silicon transistors using Oxford Instruments plasma systems
  • Update of photoresist masked silicon dioxide ICP etching at Cornell University
  • Delivery module enabling TEOS-based PECVD in PlasmaPro 100 & PlasmaPro 133 process tools
  • Magnetron sputtering at Oxford Instruments goes for gold
  • Single nanometer manufacturing
  • Contamination control in ion beam sputter deposited films
  • ZnO atomic layer deposition for high performance thin film nanowire field effect transistors
  • Graphene and related materials
  • Silicon Nano Pillar Sensor (SiNaPS)

查看更多信息,请点击: http://www.oxford-instruments.com/businesses/nanotechnology/plasma-technology/process-news
如需了解牛津仪器等离子部更多产品,请点击:http://www.oxford-instruments.cn/plasma
 

牛津仪器等离子部工艺论文集冬季篇发布