International Workshop on Nitride Semiconductors (IWN) 2012

地点:
Sapporo, 日本
日期:
2012年10月14日 - 2012年10月19日
主要业务:
等离子技术
网站:
iwn2012.jp

The International Workshop on Nitride Semiconductors (IWN) is a biennial academic conference in the field of group III nitride research.

Workshop topics

  • Growth:
    Bulk, epitaxy, and growth issues; doping; impurity; low-dimensional structure; BN, AlN, GaN, InN, and related alloys
  • Optical Devices:
    Optical devices including visible, white, and UV LEDs; laser diodes; solar cell, sensors and photodetectors; nanostructures; and processing and optical device physics
  • Optoelectronic Properties and Characterization:
    Optical process in III-nitride nanostructures; polar and nonpolar oriented layers; conductivity control in InN, AlN and related alloys; material characterization including structural analysis; and the current status of III-V-N alloys and dilute magnetic nitride.
  • Electronic Devices:
    Devices (transistors, diodes, switches, and amplifiers); applications (power conversion, wireless and communication); novel device concepts; transport and switching properties; processing techniques; contacts; and reliability