International Workshop on Nitride Semiconductors (IWN) 2012
- 2012年10月14日 - 2012年10月19日
The International Workshop on Nitride Semiconductors (IWN) is a biennial academic conference in the field of group III nitride research.
Bulk, epitaxy, and growth issues; doping; impurity; low-dimensional structure; BN, AlN, GaN, InN, and related alloys
Optical devices including visible, white, and UV LEDs; laser diodes; solar cell, sensors and photodetectors; nanostructures; and processing and optical device physics
Optoelectronic Properties and Characterization:
Optical process in III-nitride nanostructures; polar and nonpolar oriented layers; conductivity control in InN, AlN and related alloys; material characterization including structural analysis; and the current status of III-V-N alloys and dilute magnetic nitride.
Devices (transistors, diodes, switches, and amplifiers); applications (power conversion, wireless and communication); novel device concepts; transport and switching properties; processing techniques; contacts; and reliability